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Silicon-Germanium Strained Layers and Heterostructures
Angol
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The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of "Silicon-Germanium Strained Layers and Heterostructures" provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. It is fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review. The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject. It is appropriate for students and senior researchers.
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Angol
